Effect of amorphous ternary AlBN passivations on the performance of AlGaN/GaN HEMTs

In this article, an amorphous ternary AlBN dielectric passivation layer is proposed for GaN/AlGaN high-electron mobility transistors (HEMTs). The source–gate–drain access regions with both and AlN films deposited by pulsed laser deposition are investigated to understand their effects on the device performance. Compared AlN-passivated HEMTs, electrical characteristics of AlBN-passivated HEMTs significantly improved same thickness. An increase in maximum drain saturation current ∼19.74% at Vgs = 2 V, corresponding peak extrinsic transconductance 38.08% −2 V Vds V. Such excellent properties ascribed large surface potential change, due effect boron dopants films.